Electrode contact hole USES heavily doped for reducing contact conduction loss.

电极接触孔处采用重掺杂，减小接触电导损失。

The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.

研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。

It is found that pore's depth and diameter on n-InP with heavily doped concentration is larger than moderately doped samples.

本文通过对不同掺杂浓度的样品进行刻蚀，发现重掺杂的样品刻蚀出的孔在深度和孔径上都比中度掺杂的大。